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The Farm of 21st century
Murárová, Lucia ; ing.arch. Lukáš Ležatka, Ph.D (referee) ; Pavlovský, Tomáš (advisor) ; Čuprová, Danuše (advisor)
The Bachelor´s Thesis is based on the architectural study completed during the second year of the bachelor´s studies. Its aim was to design horse houses for hypotherapy with ouside uncoverd riding hall, inside roofed riding hall and an additional capacity of accommodation for visitors besides an existing object. The building is located in Orlicke hory, what affected setting in the topography and the entire setting within a building lot. In respect of a huge degree of incline of the topography, the object is set along level curves and it reflects the topography configuration. The Adelheide Farm consists of the three parts, one of them is roofed riding hall, a part meant to be a box horse housing and a part which is aimed to be a public space, what should be visible from the outside view. The design combines a traditional architecture of Orlicke hory with a modern architecture. There are used natural materials in the design, for example wood. The wooden facade lamella link two objects optically.
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Design of structures with FRP reinforcement
Matušíková, Anna ; Vácha, Jaroslav (referee) ; Štěpánek, Petr (advisor)
This diploma thesis presents available FRP software for calculating load bearing capacity of the structures reinforced with FRP and compares them between each other. Furthermore theory and algorithm of my own software is presented here. Load bearing capacity of structures which are reinforced with non-metallic reinforcement and loaded by combination of normal force and bending moment can be solved by my programme. Effects of high temperatures on the concrete structures can be included in the calculation. In the second part of the thesis is calculated load-bearing capacity and deflection of the real beam reinforced with FRP reinforcement and load-bearing capacity of member with FRP reinforcement with effect of elevated temperature. This has been done using my software. Comparison of results from hand calculation and laboratory load-bearing testing is done at the end. This laboratory testing was accomplished by Institute of Concrete and Mansory Structures at our faculty.
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Fabrication, optimization and in-situ characterization of thermally tunable vanadium dioxide nanostructures
Krpenský, Jan ; Maniš, Jaroslav (referee) ; Konečná, Andrea (advisor)
Oxid vanadičitý (VO2) přilákal v posledních desetiletích zvýšenou pozornost kvůli svému fázovému přechodu kov-izolant na teplotě okolo 68 °C. Tento fázový přechod je provázen změnou krystalové mříže z monoklinické (dielektrikum) na tetragonální (kov), smrštěním krystalové mříže v kovové fázi a výrazným rozdílem mezi transmisivitou v infračervené oblasti mezi oběma fázemi. Avšak výroba VO2 může být náročná kvůli jiným možným stochiometrickým konfiguracím jako je VO, V2O3 nebo V2O5. V posledních letech bylo použito mnoho výrobních technik, u kterých optimalizace výrobního procesu produkuje VxOy v požadované VO2 stochiometrii. V této práci je uvedeno shrnutí tří technik vhodných pro depozici tenkých vrstev VO2 a je popsán proces výroby tenkých vzorků (lamel), které jsou vhodné pro studium v transmisním elektronovém mikroskopu (TEM), pomocí fokusovaného iontového svazku (FIB). Použití TEM se zahříváním uvnitř komory pro charakterizaci VO2 vzorků produkuje cenné informace o mikrostruktuře VO2 pod i nad teplotou přechodu. Navíc dává spektroskopie energiových ztrát elektronů cenný vhled do změn různých stochiometrií VO2 v souvislosti s tloušťkou zkoumaného vzorku, zejména blízko hrany vzorku.
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Aquapark
Vincour, Jan ; Šmak, Milan (referee) ; Barnat, Jan (advisor)
Object of Diploma thesis is the structural design of a load bearing structure of the aquapark in the Brno area. The main structure is designed as lamella arch on the cylindrical surface with one curvature with 30 m span and 4.5 m camber. The structural material is glue-laminated timber with inner steel plate joints.
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2D and 3D analysis of semiconductor devices by SIMS
Vařeka, Karel ; Šamořil, Tomáš (referee) ; Bábor, Petr (advisor)
The chemical analysis of semiconductor structures using the SIMS method is the main part of this bachelor thesis. It allows the user to make a depth profiling and a creation of 2D or 3D material images. During the analysis of the chip from the TIGBT semiconductor, there is a sputtering of a heterogeneous structure in the material with different sputtering rates. It is convenient to make a cut through the material using a focused ion beam to create a profile, which grants the user to perform a tomographic measurement. This new surface enables a chemical analysis of a depth profile of semiconductor structures without the need for sputtering beam in dynamic SIMS mode. By reconstructing individual two-dimensional images, it is possible to assemble a three-dimensional pattern of the analysed sample area. Also, the preparation and removal of the lamella from the TIGBT chip were accomplished and analysed via a detector of transmission electrons.
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Preparation of semiconductor samples for transmission electron microscopy
Bajo, Viktor ; Bukvišová, Kristýna (referee) ; Horák, Michal (advisor)
This bachelor thesis deals with the preparation of samples from semiconductors for transmission electron microscopy. In the theoretical part, the most common methods of pre-preparation and finishing methods used to create ultrathin regions transparent to the electron beam of the microscope are generally described. This is followed by an overview of the experimental equipment used in the practical part for the actual sample preparation. I prepared two single crystal silicon samples, one by mechanical preparation followed by ion polishing, the other in the form of a lamella fabricated using a scanning electron microscope equipped with a focused ion beam. Mechanical preparation is significantly more time-consuming, is performed on several specialised instruments and risks destruction of the whole object under investigation. Preparation of the lamellae is relatively fast and allows a very small area of interest to be selected, leaving the rest of the sample intact but, on the other hand, requires at least basic skills in scanning electron microscopy. Both methods can be used to prepare good quality samples suitable for analysis in a transmission electron microscope. I have documented the whole procedure in the practical section that can serve as a guide for the preparation of these samples.
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Fabrication, optimization and in-situ characterization of thermally tunable vanadium dioxide nanostructures
Krpenský, Jan ; Maniš, Jaroslav (referee) ; Konečná, Andrea (advisor)
Oxid vanadičitý (VO2) přilákal v posledních desetiletích zvýšenou pozornost kvůli svému fázovému přechodu kov-izolant na teplotě okolo 68 °C. Tento fázový přechod je provázen změnou krystalové mříže z monoklinické (dielektrikum) na tetragonální (kov), smrštěním krystalové mříže v kovové fázi a výrazným rozdílem mezi transmisivitou v infračervené oblasti mezi oběma fázemi. Avšak výroba VO2 může být náročná kvůli jiným možným stochiometrickým konfiguracím jako je VO, V2O3 nebo V2O5. V posledních letech bylo použito mnoho výrobních technik, u kterých optimalizace výrobního procesu produkuje VxOy v požadované VO2 stochiometrii. V této práci je uvedeno shrnutí tří technik vhodných pro depozici tenkých vrstev VO2 a je popsán proces výroby tenkých vzorků (lamel), které jsou vhodné pro studium v transmisním elektronovém mikroskopu (TEM), pomocí fokusovaného iontového svazku (FIB). Použití TEM se zahříváním uvnitř komory pro charakterizaci VO2 vzorků produkuje cenné informace o mikrostruktuře VO2 pod i nad teplotou přechodu. Navíc dává spektroskopie energiových ztrát elektronů cenný vhled do změn různých stochiometrií VO2 v souvislosti s tloušťkou zkoumaného vzorku, zejména blízko hrany vzorku.
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2D and 3D analysis of semiconductor devices by SIMS
Vařeka, Karel ; Šamořil, Tomáš (referee) ; Bábor, Petr (advisor)
The chemical analysis of semiconductor structures using the SIMS method is the main part of this bachelor thesis. It allows the user to make a depth profiling and a creation of 2D or 3D material images. During the analysis of the chip from the TIGBT semiconductor, there is a sputtering of a heterogeneous structure in the material with different sputtering rates. It is convenient to make a cut through the material using a focused ion beam to create a profile, which grants the user to perform a tomographic measurement. This new surface enables a chemical analysis of a depth profile of semiconductor structures without the need for sputtering beam in dynamic SIMS mode. By reconstructing individual two-dimensional images, it is possible to assemble a three-dimensional pattern of the analysed sample area. Also, the preparation and removal of the lamella from the TIGBT chip were accomplished and analysed via a detector of transmission electrons.
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